Title :
The Schottky I/sup 2/L technology and its application in a 24x9 sequential access memory
Author :
Hewlett, Frank W., Jr. ; Ryden, W.D.
fDate :
4/1/1977 12:00:00 AM
Abstract :
The Schottky I/SUP 2/L device and a two-level metal scheme have been used to fabricate a 24/spl times/9 sequential access memory. The T/SUP 2/L compatible chip has 1287 Schottky I/SUP 2/L gates, operates at 60 mA, and requires an area of 13200 mil/SUP 2/. Details of the Schottky I/SUP 2/L technology and its application in a 24/spl times/9 sequential memory are discussed.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; Integrated memory circuits; bipolar integrated circuits; integrated logic circuits; integrated memory circuits; Boron; Dielectrics; Impurities; Integrated circuit interconnections; Plasma applications; Plasma density; Silicon; Surfaces; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050858
