GaAsSb for heterojunction bipolar transistors

Author

Ikossi-Anastasiou, Kiki

Author_Institution

Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

878

Lastpage

884

Abstract

The advantages of using GaAsSb in heterojunction bipolar transistors (HBT) are discussed with emphasis on two recent experimental results in the AlGaAs/GaAsSb material system. The performances of a prototype n-p-n AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits stable current gain with maximum collector current density of 5×10 ⁴ A/cm², and a p-n-p AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact which has a specific contact resistivity of 5±1×10^-7 Ω-cm² across the sample, are examined

Keywords

III-V semiconductors; aluminium compounds; contact resistance; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; semiconductor superlattices; AlGaAs-GaAsSb-GaAs; HBT; I-V characteristics; collector current density; heterojunction bipolar transistors; ideality factor; n-p-n double HBT; specific contact resistivity; stable current gain; superlattice GaAsSb emitter ohmic contact; Crystalline materials; Current density; Doping; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Ohmic contacts; Performance gain; Prototypes; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210193

Filename

210193