Title :
Polycrystalline silicon as a diffusion source and interconnect layer in I/sup 2/L realizations
Author :
Middelhoek, Jan ; Kooy, Arie
fDate :
4/1/1977 12:00:00 AM
Abstract :
Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I/SUP 2/L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Integrated logic circuits; Semiconductor doping; bipolar integrated circuits; integrated circuit technology; integrated logic circuits; semiconductor doping; Bipolar transistors; Boron; Capacitance; Etching; Fabrication; Integrated circuit layout; Region 1; Silicon; Solid state circuits; Surface resistance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050861
