A silicon double switching inversion-controlled switch for multiple-valued logic applications

Author

Fang, Y.K. ; Liu, Ching-Ru ; Chen, Kuin-Hui ; Hwang, Jun-Dar

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

918

Lastpage

922

Abstract

A device with the structure of metal/thin insulator/crystalline silicon (n⁺-p)/thin insulator/metal (MISSIM) has been demonstrated to possess a double switching characteristics, which is expected to generate multiple stable states easier than the conventional resonant tunneling devices with multiple negative resistance for multiple-valued logic applications. Based on current-voltage measurements with or without light irradiation, and under the negative gate-biased condition, the operation mechanism of the MISSIM structure is proposed and illustrated in detail

Keywords

gold; hydrogen; many-valued logics; metal-insulator-semiconductor devices; negative resistance; semiconductor switches; silicon; Au-Si:H-Si; MISSIM structure; current-voltage measurements; double switching inversion-controlled switch; light irradiation; multiple negative resistance; multiple stable states; multiple-valued logic; negative gate-biased condition; Character generation; Crystallization; Current measurement; Electrical resistance measurement; Insulation; Logic devices; Metal-insulator structures; Resonant tunneling devices; Silicon; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210199

Filename

210199