DocumentCode :
883385
Title :
Modeling the dynamic behavior of I/sup 2/L
Author :
Mattheus, Walter H. ; De Smet, Luk ; Mertens, Robert P.
Volume :
12
Issue :
2
fYear :
1977
fDate :
4/1/1977 12:00:00 AM
Firstpage :
163
Lastpage :
170
Abstract :
The validity of the charge control approach is checked for the normal (upward) operation of an I/SUP 2/L gate, leading to the conclusion that deviations are mainly due to the distributed nature of the base resistance. An alternative method is presented to determine the relevant device parameters, starting from experimental data. An equivalent model, incorporating the distributed base resistance, is proposed and verified by simulating the power delay characteristics of ring oscillators.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; Semiconductor device models; bipolar integrated circuits; integrated logic circuits; semiconductor device models; Charge measurement; Control theory; Current measurement; Delay; Electrical resistance measurement; Frequency measurement; Impedance measurement; Laboratories; Ring oscillators; Transient analysis;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1977.1050866
Filename :
1050866
Link To Document :
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