Title :
Performance enhancement of ring oscillators and transimpedance amplifiers by package strain
Author :
Yuan, Feng ; Huang, Ching-Fang ; Yu, Ming-Hsin ; Liu, Chee Wee
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
4/1/2006 12:00:00 AM
Abstract :
The appropriate external stress can enhance a device and circuit performance. The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a ∼ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design.
Keywords :
MOSFET; amplifiers; integrated circuit layout; integrated circuit packaging; oscillators; tensile strength; 180 nm; 250 nm; NFET; PFET; analog circuit design; biaxial tensile strain; digital circuit design; external stress; mechanical strain; package strain; ring oscillators; transimpedance amplifiers; uniaxial tensile strain; Active inductors; Bandwidth; Capacitive sensors; Circuit optimization; Frequency; Packaging; Ring oscillators; Tensile strain; Tensile stress; Tuned circuits; Layout direction; mechanical strain; package strain; ring oscillator; strain; transimpedance amplifier (TIA);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870568
