Performance enhancement of ring oscillators and transimpedance amplifiers by package strain

Author

Yuan, Feng ; Huang, Ching-Fang ; Yu, Ming-Hsin ; Liu, Chee Wee

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

724

Lastpage

729

Abstract

The appropriate external stress can enhance a device and circuit performance. The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a ∼ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design.

Keywords

MOSFET; amplifiers; integrated circuit layout; integrated circuit packaging; oscillators; tensile strength; 180 nm; 250 nm; NFET; PFET; analog circuit design; biaxial tensile strain; digital circuit design; external stress; mechanical strain; package strain; ring oscillators; transimpedance amplifiers; uniaxial tensile strain; Active inductors; Bandwidth; Capacitive sensors; Circuit optimization; Frequency; Packaging; Ring oscillators; Tensile strain; Tensile stress; Tuned circuits; Layout direction; mechanical strain; package strain; ring oscillator; strain; transimpedance amplifier (TIA);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870568

Filename

1610902