DocumentCode :
883411
Title :
Vertically integrated high-silica channel waveguides on Si
Author :
Barbarossa, G. ; Laybourn, P.J.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
28
Issue :
5
fYear :
1992
Firstpage :
437
Lastpage :
438
Abstract :
For the first time the vertical integration of high-silica content low-loss channel waveguide on an Si substrate is reported. The fabrication process, which has made the vertical integration feasible, consists of a practical multistep combination of flame hydrolysis deposition (FHD), photolithographic patterning and reactive ion etching. The successful application to a double integration of singlemode waveguides at 1.55 mu m is also reported. This result, which has been possible thanks to the FHD peculiarities, by extending the optical interaction to a third dimension, opens a wide range of original and promising applications, such as vertically coupled devices or parallel optical signal processors, and it effectively increases the density of optical guided-wave functions available on the same substrate.
Keywords :
chemical vapour deposition; integrated optics; optical waveguides; optical workshop techniques; silicon; silicon compounds; substrates; 1.55 micron; FHD peculiarities; Si substrate; Si substrates; fabrication process; flame hydrolysis deposition; high-silica channel waveguides; low-loss channel waveguide; multistep fabrication process; photolithographic patterning; reactive ion etching; singlemode waveguides; vertical integration;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920275
Filename :
126421
Link To Document :
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