Title :
Accurate extraction of contact resistivity on Kelvin D-resistor structures using universal curves from simulation
Author :
Santander, Joaquín ; Lozano, Manuel ; Cané, Carles
Author_Institution :
Centro Nacional de Microelectronica, Bellaterra, Spain
fDate :
5/1/1993 12:00:00 AM
Abstract :
An accurate procedure to extract contact resistivity of metal-semiconductor contacts from contact resistance measurements made on a D-resistor-type Kelvin cross test structure is presented. The effects of spreading currents are taken into account through simulation and a set of universal curves that eliminates the need of further simulations is computed. The values given can be incorporated in any contact resistance measurement routine to extract the actual value of contact resistivity along with an estimation of the error. The two-dimensional model is validated with experimental results
Keywords :
contact resistance; electric resistance measurement; ohmic contacts; semiconductor-metal boundaries; Kelvin D-resistor structures; Kelvin cross test structure; contact resistance measurement; contact resistivity; error estimation; metal-semiconductor contacts; ohmic contacts; simulation; spreading currents; two-dimensional model; universal curves; Computational modeling; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Fabrication; Kelvin; Ohmic contacts; Resistors; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
