Detection of the trapped electron distribution of PMOSFET´s after hot-carrier stress

Author

Song, Jai-Hyuk ; Park, Young-June ; Min, Hong-Shick

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

958

Lastpage

965

Abstract

A method of obtaining the spatial distribution of hot-carrier-induced trapped electrons in the gate oxide (N_0t(x)) of PMOSFETs is introduced with the aid of a two-dimensional simulator. The measured I_ds versus V_ds for various V_gs for low drain bias and I_ds versus V_gs have been compared with data obtained from the simulation concerning the obtained spatial distribution of trapped electrons in the gate oxide. There exists a high degree of agreement between the measured current-voltage characteristics after hot-carrier stress and the simulation results concerning the newly obtained spatial distribution of trapped electrons in the gate oxide

Keywords

carrier density; electron traps; hot carriers; insulated gate field effect transistors; semiconductor device testing; PMOSFETs; current-voltage characteristics; gate oxide; hot-carrier stress; spatial distribution; trapped electron distribution; two-dimensional simulator; Charge pumps; Degradation; Electron traps; Energy barrier; Hot carriers; Interface states; MOSFET circuits; Stress measurement; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210205

Filename

210205