Title :
Detection of the trapped electron distribution of PMOSFET´s after hot-carrier stress
Author :
Song, Jai-Hyuk ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
fDate :
5/1/1993 12:00:00 AM
Abstract :
A method of obtaining the spatial distribution of hot-carrier-induced trapped electrons in the gate oxide (N0t(x)) of PMOSFETs is introduced with the aid of a two-dimensional simulator. The measured Ids versus Vds for various Vgs for low drain bias and Ids versus Vgs have been compared with data obtained from the simulation concerning the obtained spatial distribution of trapped electrons in the gate oxide. There exists a high degree of agreement between the measured current-voltage characteristics after hot-carrier stress and the simulation results concerning the newly obtained spatial distribution of trapped electrons in the gate oxide
Keywords :
carrier density; electron traps; hot carriers; insulated gate field effect transistors; semiconductor device testing; PMOSFETs; current-voltage characteristics; gate oxide; hot-carrier stress; spatial distribution; trapped electron distribution; two-dimensional simulator; Charge pumps; Degradation; Electron traps; Energy barrier; Hot carriers; Interface states; MOSFET circuits; Stress measurement; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
