DocumentCode
883471
Title
I/sup 2/L DC functional requirements
Author
Davies, Roderick D. ; Estreich, Donald B. ; Meindl, James D. ; Dutton, Robert W.
Volume
12
Issue
2
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
208
Lastpage
210
Abstract
Factors controlling the DC operational limits of integrated injection logic (I/SUP 2/L) imposed by the interaction between the inverse n-p-n switching transistors and the lateral p-n-p transistor formed with the injector are discussed. The operational limit is shown to be a function only of structural and doping level parameters. An upper limit on epitaxial resistivity is shown to result.
Keywords
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Charge carrier processes; Current measurement; Doping; Geometry; Influenza; Logic devices; Predictive models; Propagation delay; Solid modeling; Testing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050874
Filename
1050874
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