Title :
Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs
Author :
Choi, J.Y. ; Schroder, Dieter K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
4/1/2006 12:00:00 AM
Abstract :
Surface preparation has a significant effect on the drain current-gate voltage characteristics of mercury-probe pseudo MOSFETs. Surface preparation by dilute hydrofluoric acid (HF) rinse manifests itself in two ways: it changes the barrier height of the Hg/Si Schottky barrier and it induces charge on the Si-film surface. Consequently, the electron drain current decreases with time after the HF rinse and the hole current increases. The surface charge also influences the extraction of the interface-trap density at the Si/buried oxide interface.
Keywords :
MOSFET; Schottky barriers; mercury (metal); semiconductor-metal boundaries; silicon; silicon-on-insulator; Hg-Si; Schottky barrier; barrier height; dilute hydrofluoric acid; drain current-gate voltage characteristics; electron drain current; film surface; hole current; interface trap density; mercury-probe pseudo MOSFET; semiconductor device measurements; silicon on insulator; surface charge; surface preparation; Charge carrier processes; Geometry; Hafnium; MOSFETs; Mercury (metals); Probes; Schottky barriers; Semiconductor films; Silicon; Voltage; Interface trap density; Schottky barrier; pseudo MOSFET; semiconductor device measurements; silicon; silicon-on-insulator; surface charge; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.871179
