Title :
Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxide
Author :
Suñé, Jordi ; Lanzoni, Massimo ; Olivo, Piero
Author_Institution :
DEIS, Bologna Univ., Italy
fDate :
5/1/1993 12:00:00 AM
Abstract :
The temperature dependence of the Fowler-Nordheim (F-N) injection of electrons from accumulated n-Si to SiO2 is analyzed. The F-N current-voltage characteristics of thin-oxide (8.5 nm) ⟨100⟩-Si(n)/SiO2/poly-Si(n+) MOS capacitors have been measured at different temperatures ranging from 90 to 473 K. The obtained results are explained treating the accumulation layer quantum-mechanically, i.e., taking into account the injection of electrons from quantized energy subbands. In order to facilitate the use of the presented results in compact device simulators, simple analytical expressions which give the F-N current as a function of temperature have been derived from the self-consistent quantum-mechanical calculations
Keywords :
accumulation layers; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; 8.5 nm; 90 to 473 K; Fowler-Nordheim injection; MOS capacitors; Si-SiO2; accumulation layer; current-voltage characteristics; device simulators; electron injection; quantized energy subbands; self-consistent quantum-mechanical calculations; temperature dependence; thin-oxide; Cathodes; Current measurement; Current-voltage characteristics; Electrons; Electrostatics; MOS capacitors; Silicon compounds; Temperature dependence; Temperature distribution; Wave functions;
Journal_Title :
Electron Devices, IEEE Transactions on
