Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxide

Author

Suñé, Jordi ; Lanzoni, Massimo ; Olivo, Piero

Author_Institution

DEIS, Bologna Univ., Italy

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

1017

Lastpage

1019

Abstract

The temperature dependence of the Fowler-Nordheim (F-N) injection of electrons from accumulated n-Si to SiO₂ is analyzed. The F-N current-voltage characteristics of thin-oxide (8.5 nm) ⟨100⟩-Si(n)/SiO₂/poly-Si(n⁺) MOS capacitors have been measured at different temperatures ranging from 90 to 473 K. The obtained results are explained treating the accumulation layer quantum-mechanically, i.e., taking into account the injection of electrons from quantized energy subbands. In order to facilitate the use of the presented results in compact device simulators, simple analytical expressions which give the F-N current as a function of temperature have been derived from the self-consistent quantum-mechanical calculations

Keywords

accumulation layers; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; 8.5 nm; 90 to 473 K; Fowler-Nordheim injection; MOS capacitors; Si-SiO₂; accumulation layer; current-voltage characteristics; device simulators; electron injection; quantized energy subbands; self-consistent quantum-mechanical calculations; temperature dependence; thin-oxide; Cathodes; Current measurement; Current-voltage characteristics; Electrons; Electrostatics; MOS capacitors; Silicon compounds; Temperature dependence; Temperature distribution; Wave functions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210213

Filename

210213