High Brightness GaN-Based Light-Emitting Diodes

Author

Lee, Ya-Ju ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung

Author_Institution

Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

3

Issue

2

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

118

Lastpage

125

Abstract

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces

Keywords

III-V semiconductors; etching; light emitting diodes; sapphire; wide band gap semiconductors; 465 nm; GaN; LED; chemical wet etching; double diffuse surface; extraction quantum efficiency; internal quantum efficiency; light-emitting diodes; sapphire substrates; Brightness; Chemicals; Gallium nitride; Light emitting diodes; Light scattering; Particle scattering; Refractive index; Semiconductor materials; Substrates; Wet etching; Extraction quantum efficiency; GaN; internal quantum efficiency; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2007.894380

Filename

4211196