Title :
Characterization of neutral base recombination for SiGe HBTs
Author :
Fu, Jun ; Bach, Konrad
Author_Institution :
X-FAB Semicond. Foundries AG, Erfurt, Germany
fDate :
4/1/2006 12:00:00 AM
Abstract :
This paper, based on theoretical derivation of the expression for neutral base recombination (NBR) current, proposes a new characteristic parameter for NBR characterization and a method for estimating base minority-carrier lifetime for SiGe-base heterojunction bipolar transistors (HBTs). Furthermore, the proposed parameter is used to characterize the influence of NBR on the fabricated lightly base-doped SiGe and heavily base-doped SiGe:C HBTs. As a result, the base lifetimes are estimated to be around 2.0 and 0.10 ns for the SiGe and SiGe:C HBTs, respectively.
Keywords :
Ge-Si alloys; carrier lifetime; heterojunction bipolar transistors; semiconductor doping; HBT; SiGe; base minority carrier lifetime; heterojunction bipolar transistor; neutral base recombination; Analog circuits; Bipolar transistors; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Life estimation; Lifetime estimation; SPICE; Silicon germanium; Voltage; Heterojunction bipolar transistor (HBT); SiGe; lifetime; neutral base recombination (NBR);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870573
