Characterization of neutral base recombination for SiGe HBTs

Author

Fu, Jun ; Bach, Konrad

Author_Institution

X-FAB Semicond. Foundries AG, Erfurt, Germany

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

844

Lastpage

850

Abstract

This paper, based on theoretical derivation of the expression for neutral base recombination (NBR) current, proposes a new characteristic parameter for NBR characterization and a method for estimating base minority-carrier lifetime for SiGe-base heterojunction bipolar transistors (HBTs). Furthermore, the proposed parameter is used to characterize the influence of NBR on the fabricated lightly base-doped SiGe and heavily base-doped SiGe:C HBTs. As a result, the base lifetimes are estimated to be around 2.0 and 0.10 ns for the SiGe and SiGe:C HBTs, respectively.

Keywords

Ge-Si alloys; carrier lifetime; heterojunction bipolar transistors; semiconductor doping; HBT; SiGe; base minority carrier lifetime; heterojunction bipolar transistor; neutral base recombination; Analog circuits; Bipolar transistors; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Life estimation; Lifetime estimation; SPICE; Silicon germanium; Voltage; Heterojunction bipolar transistor (HBT); SiGe; lifetime; neutral base recombination (NBR);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870573

Filename

1610918