• DocumentCode
    883629
  • Title

    Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation

  • Author

    Dollfus, P. ; Galdin, S. ; Hesto, P.

  • Author_Institution
    Inst. d´Electron. Fondamentale, Paris Univ., France
  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • Firstpage
    458
  • Lastpage
    460
  • Abstract
    The current gain of an intrinsic HEMT is determined as function of frequency using small-signal Monte Carlo simulations. The fT obtained is in good agreement with the value derived from steady-state results by FT=gm/2 pi CG. A set of Z parameters is also calculated and an equivalent circuit model is deduced.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; AlGaAs-InGaAs; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920289
  • Filename
    126435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883629