DocumentCode :
883629
Title :
Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation
Author :
Dollfus, P. ; Galdin, S. ; Hesto, P.
Author_Institution :
Inst. d´Electron. Fondamentale, Paris Univ., France
Volume :
28
Issue :
5
fYear :
1992
Firstpage :
458
Lastpage :
460
Abstract :
The current gain of an intrinsic HEMT is determined as function of frequency using small-signal Monte Carlo simulations. The fT obtained is in good agreement with the value derived from steady-state results by FT=gm/2 pi CG. A set of Z parameters is also calculated and an equivalent circuit model is deduced.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; AlGaAs-InGaAs; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920289
Filename :
126435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883629
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