Title :
A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors
Author :
Chandrasekhar, S. ; Lunardi, L.M. ; Gnauck, A.H. ; Ritter, Daniel ; Hamm, R.A. ; Panish, M.B. ; Qua, G.J.
Author_Institution :
AT&T Bell Lab., Crawford Hill Lab., Holmdel, NJ, USA
Abstract :
Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10-9 at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.53 micron; 10 Gbit/s; 350 ohm; 6 GHz; InP-InGaAs; MOMBE; OEIC photoreceiver; bandwidth; bit error rate; heterojunction bipolar transistors; long wavelength OEIC photoreceiver; monolithic photoreceiver; pin photodetector; semiconductors; transimpedance; transimpedance preamplifier; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920294
