DocumentCode :
883677
Title :
Ion drift effect in silicon p-n junctions formed by sodium ion bombardment
Author :
Waldner, Manuela
Volume :
54
Issue :
9
fYear :
1966
Firstpage :
1187
Lastpage :
1188
Keywords :
Breakdown voltage; Capacitance; Diodes; Electric breakdown; P-n junctions; Plasma temperature; Pulse measurements; Silicon; Temperature dependence; Testing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5066
Filename :
1446996
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883677
