Title :
Base-region optimization of SiGe HBTs for high-frequency microwave power amplification
Author :
Ma, Zhenqiang ; Jiang, Ningyue
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
4/1/2006 12:00:00 AM
Abstract :
The base-region optimization of SiGe power heterojunction bipolar transistors (HBTs) for high-frequency microwave power amplification is investigated. It is found that employing a heavily doped base region in conjunction with a high Ge content of proper profile can effectively improve the large-signal power-gain values of SiGe HBTs while maintaining their high breakdown voltages and thus allow them to be efficiently operated with high power at higher microwave frequencies. More importantly, with such a base-region optimization, not only lateral-scaling requirements can be relaxed but also a common-base configuration for power amplification using these devices can be favored, which further enhances the power-gain values of SiGe power HBTs at high frequencies. Load-pull experimental results are presented to show the highest figure-of-merit power performance of SiGe power HBTs with an optimized base region. The power performance of SiGe power HBTs operated at X-band with different base-region designs was also compared to illustrate the significant benefits that result from the base-region optimization.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; HBT; SiGe; base-region optimization; breakdown voltage; high frequency microwave power amplification; power performance; Costs; Design optimization; Doping profiles; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave frequencies; Radio frequency; Silicon germanium; Telephone sets; Common base (CB); SiGe heterojunction bipolar transistors (HBTs); doping profile; figure-of-merit (FOM); load pull; microwave; power amplification; power gain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870279