Design of a high-gain FET amplifier operating at 4.4-5.0 GHz

Author

Sechi, Franco N. ; Paglione, Robert W.

Volume

12

Issue

3

fYear

1977

fDate

6/1/1977 12:00:00 AM

Firstpage

285

Lastpage

290

Abstract

Described here is the design and the electrical performance of a MESFET amplifier featuring an output power of 1 W with a gain of 34 dB over the frequency range from 4.4 to 5.0 GHz. The key elements that allowed the achievement of this performance were: high-gain power MESFET´s, a circuit design technique based on power characterization of the MESFET´s, and a low-parasitics integrated microstrip construction. The amplifier is intended to replace a medium power TWT in a telecommunication system. When compared with a typical 1-W TWT this solid-state amplifier not only requires a much simpler power supply, is lighter and has perhaps higher reliability, but also has some better electrical performances; this should result in better system performance.

Keywords

Field effect transistor circuits; Microwave amplifiers; Microwave integrated circuits; Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; microwave integrated circuits; Circuit synthesis; FETs; Frequency; MESFET integrated circuits; Microstrip; Performance gain; Power amplifiers; Power generation; Power system reliability; Solid state circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1977.1050894

Filename

1050894