Title :
Design of a high-gain FET amplifier operating at 4.4-5.0 GHz
Author :
Sechi, Franco N. ; Paglione, Robert W.
fDate :
6/1/1977 12:00:00 AM
Abstract :
Described here is the design and the electrical performance of a MESFET amplifier featuring an output power of 1 W with a gain of 34 dB over the frequency range from 4.4 to 5.0 GHz. The key elements that allowed the achievement of this performance were: high-gain power MESFET´s, a circuit design technique based on power characterization of the MESFET´s, and a low-parasitics integrated microstrip construction. The amplifier is intended to replace a medium power TWT in a telecommunication system. When compared with a typical 1-W TWT this solid-state amplifier not only requires a much simpler power supply, is lighter and has perhaps higher reliability, but also has some better electrical performances; this should result in better system performance.
Keywords :
Field effect transistor circuits; Microwave amplifiers; Microwave integrated circuits; Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; microwave integrated circuits; Circuit synthesis; FETs; Frequency; MESFET integrated circuits; Microstrip; Performance gain; Power amplifiers; Power generation; Power system reliability; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050894
