Title :
High quantum efficiency deep ultraviolet 4HSiC photodetectors
Author :
Sampath, A.V. ; Rodak, L.E. ; Chen, Yuanfeng ; Zhou, Qu ; Campbell, Joe C. ; Shen, Haiying ; Wraback, M.
Author_Institution :
Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
Abstract :
4H-SiC p-n--metal photodetectors are demonstrated having high external quantum efficiency >~40% in the deep ultraviolet spectrum between 200 and 235 nm. This improvement is attributed to the improved collection of carriers generated by deep ultraviolet photons through absorption in the depletion region of the detector.
Keywords :
photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC p-n--metal photodetectors; SiC; absorption; carrier collection; deep ultraviolet 4H- SiC photodetectors; deep ultraviolet photons; deep ultraviolet spectrum; depletion region; quantum efficiency; wavelength 200 nm to 235 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.2889
