• DocumentCode
    883811
  • Title

    High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology

  • Author

    Schreiber, H.-U.

  • Author_Institution
    Mikroelektronik-Zentrum, Ruhr-Univ. Bochum, Germany
  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • Firstpage
    485
  • Lastpage
    487
  • Abstract
    A process technology is presented for a selfaligned double mesa Si/SiGe HBT. The technology is based on ion implanted device contacts and on the formation of an oxide spacer surmounting the emitter mesa edge, thus permitting a simple separation of base and emitter metal contacts. Transit frequency measurements resulted in 39 GHz (VCB=1 V).
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor materials; semiconductor technology; silicon; 39 GHz; HBT; Si-SiGe; double mesa; heterojunction bipolar transistor; high speed device; ion implanted device contacts; oxide spacer; process technology; selfalignment technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920306
  • Filename
    126452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883811