DocumentCode
883864
Title
The compressive nature of optical detection in GaAs MESFETs and possible application as an RF logarithmic amplifier
Author
Madjar, Asher ; Paollela, Arthur ; Herczfeld, Peter R.
Author_Institution
Technion-Israel Inst. of Technol., Haifa, Israel
Volume
41
Issue
1
fYear
1993
fDate
1/1/1993 12:00:00 AM
Firstpage
165
Lastpage
167
Abstract
The photodetection mechanisms in GaAs MESFETs have been investigated by several researchers. The authors have previously performed an in-depth study of the MESFET as an optical detector under constant illumination involving both experimental and theoretical modeling. In this work, they discuss the compressive nature of that photodetection process. Experimental results involving constant illumination, modulated light and pulsed illumination verify the theoretical conclusions. A suggested structure for an RF logarithmic amplifier based on the above phenomenon is presented
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photodetectors; photovoltaic effects; radiofrequency amplifiers; GaAs; MESFETs; RF logarithmic amplifier; compressive nature; constant illumination; log amp; modulated light; optical detection; photodetection mechanisms; pulsed illumination; Gallium arsenide; Lighting; MESFETs; Optical amplifiers; Optical detectors; Optical modulation; Optical pulses; Pulse amplifiers; Pulse modulation; Radio frequency;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.210249
Filename
210249
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