• DocumentCode
    883864
  • Title

    The compressive nature of optical detection in GaAs MESFETs and possible application as an RF logarithmic amplifier

  • Author

    Madjar, Asher ; Paollela, Arthur ; Herczfeld, Peter R.

  • Author_Institution
    Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    41
  • Issue
    1
  • fYear
    1993
  • fDate
    1/1/1993 12:00:00 AM
  • Firstpage
    165
  • Lastpage
    167
  • Abstract
    The photodetection mechanisms in GaAs MESFETs have been investigated by several researchers. The authors have previously performed an in-depth study of the MESFET as an optical detector under constant illumination involving both experimental and theoretical modeling. In this work, they discuss the compressive nature of that photodetection process. Experimental results involving constant illumination, modulated light and pulsed illumination verify the theoretical conclusions. A suggested structure for an RF logarithmic amplifier based on the above phenomenon is presented
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photodetectors; photovoltaic effects; radiofrequency amplifiers; GaAs; MESFETs; RF logarithmic amplifier; compressive nature; constant illumination; log amp; modulated light; optical detection; photodetection mechanisms; pulsed illumination; Gallium arsenide; Lighting; MESFETs; Optical amplifiers; Optical detectors; Optical modulation; Optical pulses; Pulse amplifiers; Pulse modulation; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.210249
  • Filename
    210249