DocumentCode
883895
Title
Demonstration of novel quantum well gate controlled photodetector switch
Author
Xu, Jimmy M. ; Mand, R.S. ; SpringThorpe, A.J.
Author_Institution
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume
28
Issue
5
fYear
1992
Firstpage
501
Lastpage
503
Abstract
A novel three-terminal quantum well gated photodetector (QWGPD) switch, based on a non-selfaligned field effect transistor (FET), is proposed and demonstrated. The QWGPD switch is shown to have two modes of operation. In the optical mode, the responsivity is controlled by the gate and a high responsivity of 244 A/W has been achieved. In the electronic mode, the QWGPD behaves like a conventional FET, with high peak transconductance, and is insensitive to light.
Keywords
field effect transistors; photodetectors; semiconductor quantum wells; semiconductor switches; FET; electronic mode; field effect transistor; nonselfaligned FET; optical mode; photodetector switch; quantum well gated photodetector; three-terminal devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920316
Filename
126462
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