Title :
Tunnel injection transmit-time diodes for W-band power generation
Author :
Kidner, C. ; Eisele, H. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
GaAs p++n+n-n+ single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a DC to RF conversion efficiency of 2.6% was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.
Keywords :
III-V semiconductors; gallium arsenide; solid-state microwave devices; tunnel diodes; 2.6 percent; 32 mW; 93.5 GHz; DC/RF conversion efficiency; EHF; GaAs; TUNNETT; W-band; p ++n +n -n +; power generation; single-drift; transmit-time diodes; tunnel injection transit-time; waveguide cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920322
