• DocumentCode
    884000
  • Title

    Dual depletion CMOS (D/sup 2/CMOS) static memory cell

  • Author

    Takagi, Hiromitsu ; Kano, Gota

  • Volume
    12
  • Issue
    4
  • fYear
    1977
  • Firstpage
    424
  • Lastpage
    426
  • Abstract
    A new type of static memory cell-dual depletion CMOS (D/SUP 2/MOS)-has been designed and fabricated using SOS wafers by the conventional CMOS/SOS technology. In contrast to the conventional CMOS static memory cell, which comprises six transistors, the new cell consists merely of four transistors and one data-line so that the cell area can be significantly reduced.
  • Keywords
    Field effect integrated circuits; Integrated memory circuits; field effect integrated circuits; integrated memory circuits; CMOS memory circuits; CMOS technology; Epitaxial layers; Fabrication; MOSFETs; Oxidation; Read-write memory; Solids; Threshold voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1977.1050924
  • Filename
    1050924