DocumentCode
884000
Title
Dual depletion CMOS (D/sup 2/CMOS) static memory cell
Author
Takagi, Hiromitsu ; Kano, Gota
Volume
12
Issue
4
fYear
1977
Firstpage
424
Lastpage
426
Abstract
A new type of static memory cell-dual depletion CMOS (D/SUP 2/MOS)-has been designed and fabricated using SOS wafers by the conventional CMOS/SOS technology. In contrast to the conventional CMOS static memory cell, which comprises six transistors, the new cell consists merely of four transistors and one data-line so that the cell area can be significantly reduced.
Keywords
Field effect integrated circuits; Integrated memory circuits; field effect integrated circuits; integrated memory circuits; CMOS memory circuits; CMOS technology; Epitaxial layers; Fabrication; MOSFETs; Oxidation; Read-write memory; Solids; Threshold voltage; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050924
Filename
1050924
Link To Document