DocumentCode :
884021
Title :
The current dependency of the output conductance of voltage-driven bipolar transistors
Author :
Meijer, Gerard
Volume :
12
Issue :
4
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
428
Lastpage :
429
Abstract :
The current dependency of the output conductance of voltage-driven bipolar junction transistors (BJTs) is discussed. It is shown that by combining the established theories about basewidth modulation and thermal feedback the output admittance of voltage-driven BJTs can be accurately predicted over a large range of current levels. The current dependency of the output admittance of some basic IC configurations is discussed in detail.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Electric admittance; bipolar integrated circuits; bipolar transistors; electric admittance; Admittance; Bipolar transistors; Circuits; Impedance; Mirrors; Output feedback; Power dissipation; Temperature dependence; Thermal resistance; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1977.1050926
Filename :
1050926
Link To Document :
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