Empirical Model for the Effective Electron Mobility in Silicon Nanowires

Author

Granzner, Ralf ; Polyakov, Vladimir M. ; Schippel, Christian ; Schwierz, Frank

Author_Institution

Fachgebiet Festkorperelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3601

Lastpage

3607

Abstract

An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as the impact of the effective vertical field are considered. A comparison with a variety of experimental mobility data from the literature shows that the model can be treated as a reference for benchmarking different NW technologies. The effective field dependence is modeled by a simple expression making our mobility model very efficient for the use in numerical device simulators or in analytical MOSFET models.

Keywords

electron mobility; elemental semiconductors; nanowires; phonons; silicon; surface roughness; surface scattering; Si; analytical MOSFET models; effective electron mobility; effective field dependence; effective vertical field; electron transport; empirical model; numerical device simulators; numerical simulations; phonon scattering; silicon nanowires; surface roughness scattering; Electron mobility; MOSFET; Market research; Mathematical model; Phonons; Scattering; Semiconductor device modeling; Effective field; MOSFET; empirical model; mobility; phonon scattering; silicon nanowires (SiNWs); surface roughness (SR);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2354254

Filename

6911985