• DocumentCode
    884107
  • Title

    Design for a Tunnel Diode-Transistor Store with Nondestructive Read-Out of Information

  • Author

    Earnshaw, J.B.

  • Author_Institution
    Physics Dept., University of Auckland, Auckland, New Zealand.
  • Issue
    6
  • fYear
    1964
  • Firstpage
    710
  • Lastpage
    722
  • Abstract
    The design of a random-access, word-organized storage system with nondestructive read-out of information is described. The storage element upon which the design is based consists of a tunnel diode-transistor combination. Measurements on a simulated store of 16 words ×24 digits capacity indicate that cycle times of approximately 40 nsec for Read orders and 65 nsec for Write orders can be achieved.
  • Keywords
    Design for experiments; Diodes; Electronic equipment testing; Logic testing; Personnel; Regression analysis; Statistical analysis; System testing; Telephony; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electronic Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0367-7508
  • Type

    jour

  • DOI
    10.1109/PGEC.1964.263905
  • Filename
    4038303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=884107