Title :
Amplifier and Driver Circuits for Thin Film Memories with 15 Nanoseconds Read Cycle Time
Author_Institution :
Research Lab., IBM Corporation, Ruschlikon ZH, Switzerland.
Abstract :
Amplifier and driver circuit design principles for an experimental 4608-bit nondestructive thin film memory with 13.5-nsec read and 60-nsec write cycle times are given. The bit noise problems inherent in the common bit sense line concept are solved by using tunnel diodes in a nonlinear balancing circuit. A further improvement of the signal-to-noise ratio is achieved by employing a noise resistant sense amplifier with nonlinear negative feedback. The word driver described is capable of delivering 700 ma pulse amplitude at 50 mc repetition rate at a pulse width of 7 nsec.
Keywords :
Coaxial cables; Diodes; Driver circuits; Logic circuits; Propagation delay; Pulse amplifiers; Pulse width modulation inverters; Solid state circuits; Space vector pulse width modulation; Thin film circuits;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1964.263906
