Title :
A static 4096-bit bipolar random-access memory
Author :
Herndon, William H. ; Ho, Wally ; Ramirez, Roger
Abstract :
A description of a 23600 mil/SUP 2/, 35-ns 4096/spl times/1 bit bipolar RAM is presented. The historical evolution of density and performance of the 1024/spl times/1 forerunner along with advanced production and circuit techniques indicate the availability of an 11000 mil/SUP 2/, 10-ns, 4096/spl times/1 bipolar RAM by 1981.
Keywords :
Bipolar integrated circuits; Integrated memory circuits; Random-access storage; bipolar integrated circuits; integrated memory circuits; random-access storage; Availability; MOSFET circuits; Manufacturing; Memory management; Production; Random access memory; Read-write memory; Research and development; Research and development management; Technology management;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050946
