DocumentCode
884244
Title
A static 4096-bit bipolar random-access memory
Author
Herndon, William H. ; Ho, Wally ; Ramirez, Roger
Volume
12
Issue
5
fYear
1977
Firstpage
524
Lastpage
527
Abstract
A description of a 23600 mil/SUP 2/, 35-ns 4096/spl times/1 bit bipolar RAM is presented. The historical evolution of density and performance of the 1024/spl times/1 forerunner along with advanced production and circuit techniques indicate the availability of an 11000 mil/SUP 2/, 10-ns, 4096/spl times/1 bipolar RAM by 1981.
Keywords
Bipolar integrated circuits; Integrated memory circuits; Random-access storage; bipolar integrated circuits; integrated memory circuits; random-access storage; Availability; MOSFET circuits; Manufacturing; Memory management; Production; Random access memory; Read-write memory; Research and development; Research and development management; Technology management;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050946
Filename
1050946
Link To Document