DocumentCode
884293
Title
Three-terminal CID as random access memory cell
Author
Koch, R. ; Herbst, H. ; Jespers, P.
Volume
12
Issue
5
fYear
1977
Firstpage
534
Lastpage
536
Abstract
A method for electrical write-in via punchthrough is described, with which CIDs can be operated as memories. The principle has been successfully proven on a 3T-CID RAM. Estimated values achievable with an optimized device are presented.
Keywords
Charge-coupled device circuits; Integrated memory circuits; Random-access storage; charge-coupled device circuits; integrated memory circuits; random-access storage; Bipolar transistor circuits; Costs; Electrodes; Electrons; Logic circuits; MOS capacitors; Random access memory; Read-write memory; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050950
Filename
1050950
Link To Document