Experimental study of Gummel-Poon model parameter correlations for bipolar junction transistors

For the purpose of statistical modeling it is necessary to choose a few independent device parameters. A number of devices are characterized in terms of their Gummel-Poon model parameters. Correlations between these parameters are studied. The parameters are divided into two groups. The first group consists of parameters depending on collector doping. Collector resistance R/SUB C/ can be chosen as the controlling parameter for this group. The second group comprises the parameters influenced by emitter and base dopings. For this group, using the statistical method of factor analysis to analyze these correlations, it is shown that the variation in the measured data can be effectively expressed in terms of only a few controlling parameters. It is shown that the saturation current I/SUB S/ shows good correlations with most of the model parameters and can be used as an independent parameter from which other parameters can then be computed.