Title :
Linear compatible I/SUP 2/L technology with high voltage transistors
Author :
Bergmann, GÜnther
fDate :
10/1/1977 12:00:00 AM
Abstract :
A technology is proposed in which it is possible to realize both I/SUP 2/L circuits and linear transistors with V/SUB CBO/ of 60 V. The essential step in such a technology is an additional n/SUP +/-flat diffusion. The technological parameters are derived. From measurements on wafers processed in the outlined technology. The author established functioning I/SUP 2/L elements and high voltage transistors.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Atomic layer deposition; Breakdown voltage; Contact resistance; Doping profiles; Epitaxial layers; Niobium; Region 5; Safety; Space technology; Surface resistance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050956
