DocumentCode :
884384
Title :
Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering
Author :
Shieh, C. ; Mantz, J. ; Engelmann, R. ; Alaui, K.
Author_Institution :
Siemens Corp. Res. Inc., Princeton, NJ, USA
Volume :
25
Issue :
6
fYear :
1989
fDate :
3/6/1989 12:00:00 AM
Firstpage :
378
Lastpage :
379
Abstract :
A simple self-aligned fabrication process for sulphur-diffusion disordered AlGaAs/GaAs multiple quantum well (MQW) lasers is described that produces refractive index guiding. However, the gradual profile of sulphur diffusion causes a separation between the disordered/nondisordered interface and the pn junction which leads to a large lateral optical loss of the index-guided mode.
Keywords :
III-V semiconductors; aluminium compounds; diffusion in solids; gallium arsenide; semiconductor doping; semiconductor junction lasers; sulphur; AlGaAs:S-GaAs; MQW lasers; S diffusion induced disordering; disordered laser technology; disordered/nondisordered interface; gradual profile; index-guided mode; index-guided multiple quantum well laser; lateral optical loss; pn junction; refractive index guiding; self-aligned fabrication process; semiconductors; single mask process;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890261
Filename :
21033
Link To Document :
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