DocumentCode
884384
Title
Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering
Author
Shieh, C. ; Mantz, J. ; Engelmann, R. ; Alaui, K.
Author_Institution
Siemens Corp. Res. Inc., Princeton, NJ, USA
Volume
25
Issue
6
fYear
1989
fDate
3/6/1989 12:00:00 AM
Firstpage
378
Lastpage
379
Abstract
A simple self-aligned fabrication process for sulphur-diffusion disordered AlGaAs/GaAs multiple quantum well (MQW) lasers is described that produces refractive index guiding. However, the gradual profile of sulphur diffusion causes a separation between the disordered/nondisordered interface and the pn junction which leads to a large lateral optical loss of the index-guided mode.
Keywords
III-V semiconductors; aluminium compounds; diffusion in solids; gallium arsenide; semiconductor doping; semiconductor junction lasers; sulphur; AlGaAs:S-GaAs; MQW lasers; S diffusion induced disordering; disordered laser technology; disordered/nondisordered interface; gradual profile; index-guided mode; index-guided multiple quantum well laser; lateral optical loss; pn junction; refractive index guiding; self-aligned fabrication process; semiconductors; single mask process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890261
Filename
21033
Link To Document