An experimental methods of characterizing nonlinear 2-ports and its application to microwave class-C transistor power amplifier design

A new `black-box´ approach to the measurement of nonlinear 2-ports is presented. This is based on the simultaneous application of two signals at the same frequency to the input and output ports. The measured characteristics of three transistors are used to predict their performances as class-C microwave power amplifiers. The transistors are then used in practical realizations of the amplifiers. Predicted and measured results are compared.