• DocumentCode
    884401
  • Title

    Multichannel CMOS ASIC preamplifiers for avalanche photodiode and microstrip gas chamber readouts

  • Author

    Yeom, J.Y. ; Takahashi, H. ; Siritiprussamee, P. ; Murayama, H. ; Nakazawa, M.

  • Author_Institution
    Dept. of Quantum Eng. & Syst. Sci., Univ. of Tokyo
  • Volume
    53
  • Issue
    1
  • fYear
    2006
  • Firstpage
    242
  • Lastpage
    246
  • Abstract
    A 10-channel (Ch) and a 16-Ch application specific integrated circuit (ASIC) preamplifier chip with telescopic-cascode topology and gain-boosted (regulated) cascode topology respectively has been designed for avalanche photodiode (APD) and microstrip gas chamber (MSGC) readouts. These highly integrated and reliable chips can be used for individual readouts from many channels to improve the spatial resolution and counting rate of such detectors over light sharing or charge division schemes. These chips were fabricated on a 2.4 times2.4 mm die area using ROHM 0.35-mu CMOS technology. The chips were tested to have a low optimum equivalent noise charge (ENC) of about 880 e$at a shaping time of 0.5 mus. The voltage output to charge input gains of the 10-Ch and 16-Ch preamplifiers are 0.71/pf and 0.91/pf while the rise times (10%-90%) are 15 and 13 ns, respectively. The 16-Ch chip was used to readout a GSO-APD detector and an optimum energy resolution of 11.3% (511 Kev peak of Na-22) was obtained while the coincidence time resolution with two such detectors is about 12.5 ns. The energy resolution of the 5.9 keV peak from a Fe-55 source obtained with a 3 times3 cm MSGC plate was about 20.5%
  • Keywords
    CMOS integrated circuits; application specific integrated circuits; avalanche photodiodes; nuclear electronics; preamplifiers; proportional counters; readout electronics; 0.35 mum; 0.5 mus; 10-channel application specific integrated circuit preamplifier chip; 13 ns; 15 ns; 16-channel application specific integrated circuit preamplifier chip; 2.4 mm; 3 cm; 5.9 keV; Fe-55 source; GSO-APD detector; ROHM CMOS technology; avalanche photodiode; charge division scheme; coincidence time resolution; equivalent noise charge; gain-boosted regulated cascode topology; light sharing scheme; microstrip gas chamber readouts; multichannel CMOS ASIC preamplifiers; shaping time; telescopic-cascode topology; Application specific integrated circuits; Avalanche photodiodes; CMOS technology; Circuit topology; Detectors; Energy resolution; Integrated circuit reliability; Microstrip; Optical design; Preamplifiers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.869821
  • Filename
    1610983