DocumentCode

884413

Title

Surface charge after annealing of Al-SiO2-Si structures under bias

Author

Goetzberger, A. ; Nigh, H.E.

Author_Institution

Bell Telephone Laboratories, Inc., Murray Hill, N.J.

Volume

54

Issue

10

fYear

1966

Firstpage

1454

Lastpage

1454

Keywords

Annealing; Capacitors; Etching; Laboratories; Silicon compounds; Telephony; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1966.5134

Filename

1447064