Title :
Surface charge after annealing of Al-SiO2-Si structures under bias
Author :
Goetzberger, A. ; Nigh, H.E.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Keywords :
Annealing; Capacitors; Etching; Laboratories; Silicon compounds; Telephony; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1966.5134
