Title :
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar
Author :
Tessmann, Axel ; Kallfass, Ingmar ; Leuther, Arnulf ; Massler, Hermann ; Kuri, Michael ; Riessle, Markus ; Zink, Martin ; Sommer, Rainer ; Wahlen, Alfred ; Essen, Helmut ; Hurm, Volker ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Appl. Solid State Phys., Fraun- hofer Inst., Freiburg
Abstract :
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; low noise amplifiers; millimetre wave field effect transistors; millimetre wave mixers; power amplifiers; synthetic aperture radar; transistor circuits; COBRA-210; FET; GCPW; ISAR; InAlAs-InGaAs; W-band frequency multiplier; bandwidth 8 GHz; circuit package; depletion-type metamorphic high electron mobility transistor technology; dual-gate field-effect transistor mixer; frequency 105 GHz; frequency 210 GHz; frequency 75 GHz to 220 GHz; grounded coplanar circuit topology; high-resolution radar system; inverse synthetic aperture radar; low-noise amplifier; mHEMT; metamorphic HEMT MMIC; millimeter-wave monolithic integrated circuits; power amplifier circuit; quartz substrates; size 0.05 mum; size 0.1 mum; size 50 mum; waveguide-to-microstrip transitions; Circuits; FETs; Field effect MMICs; Frequency; High power amplifiers; Indium compounds; MIMICs; Millimeter wave technology; Radar; mHEMTs; Dual-gate FET; G-band; W-band; frequency multiplier; grounded coplanar waveguide (GCPW); high-power amplifier (HPA); inverse synthetic aperture radar (ISAR); low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); subharmonically pumped mixer;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2002931
