• DocumentCode
    884504
  • Title

    250 W HVHBT Doherty With 57% WCDMA Efficiency Linearized to {-} 55 dBc for 2c11 6.5 dB PAR

  • Author

    Steinbeiser, Craig ; Landon, Thomas ; Suckling, Charles ; Nelson, James ; Delaney, Joe ; Hitt, John ; Witkowski, Larry ; Burgin, Gary ; Hajji, Rached ; Krutko, Oleh

  • Author_Institution
    TriQuint Semicond., Richardson, TX
  • Volume
    43
  • Issue
    10
  • fYear
    2008
  • Firstpage
    2218
  • Lastpage
    2228
  • Abstract
    A two-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using high-voltage HBT (HVHBT) GaAs technology biased at 28 V on the collector. Greater than 57% collector efficiency at 50 W (47 dBm) average output power has been demonstrated while achieving -55 dBc linearized ACPR at 5 MHz offset using a two-carrier-side-by-side WCDMA input signal with 6.5 dB PAR measured at 0.01% probability on the CCDF. In addition, a two-stage HVHBT lineup exhibiting 450 W (56.5 dBm) peak power has been demonstrated. The output stage consists of a pair of 250 W two-way symmetrical Doherty amplifiers power combined using a low-loss branchline combiner and driven by a single-ended 100 W class AB high-efficiency amplifier. The lineup demonstrated 44% PAE at 100 W (50 dBm) average output power with 25 dB lineup gain while achieving - 55 dBc linearized ACPR at 5 MHz offset using a two-carrier-side-by-side WCDMA input signal with 6.5 dB PAR measured at 0.01% probability on the CCDF. The lineup exhibits 400 W (56 dBm) PldB at 60% PAE CW, with 45% PAE at 6 dB backoff.
  • Keywords
    III-V semiconductors; broadband networks; code division multiple access; gallium arsenide; heterojunction bipolar transistors; power amplifiers; CCDF; HVHBT Doherty; PAR; collector; efficiency 57 percent; high-voltage HBT technology; low-loss branchline combiner; noise figure 6.5 dB; power 250 W; single-ended class AB high-efficiency amplifier; symmetrical Doherty amplifier; two-carrier-side-by-side WCDMA input signal; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Doherty; GaAs HVHBT; WCDMA; digital pre-distortion; efficiency; power amplifier;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2008.2004456
  • Filename
    4639532