• DocumentCode
    884714
  • Title

    High Density CID Imagers

  • Author

    Brown, Dale M. ; Ghezzo, Mario ; Sargent, Paul L.

  • Volume
    13
  • Issue
    1
  • fYear
    1978
  • fDate
    2/1/1978 12:00:00 AM
  • Firstpage
    5
  • Lastpage
    10
  • Abstract
    The fabrication and performance of large (16K, 60K, and 78K cells) high density CID self-scanned imager arrays is described. Array fabrication used overlapping electrodes of two levels of polysilicon or a first level of polysilicon and a second level of antimony tin oxide. Yield considerations and the special processing steps required to fabricate these large chips are examined. Quantum efficiency curves of these structures are compared.
  • Keywords
    Charge-coupled device circuits; Image sensors; Aluminum; Annealing; Circuits; Clocks; Dark current; Electrodes; Fabrication; Hydrogen; Research and development; Tin;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1050988
  • Filename
    1050988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=884714