W-Band Sb-Diode Detector MMICs for Passive Millimeter Wave Imaging

Author

Moyer, H.P. ; Schulman, J.N. ; Lynch, J.J. ; Schaffner, J.H. ; Sokolich, M. ; Royter, Y. ; Bowen, R.L. ; McGuire, C.F. ; Hu, M. ; Schmitz, A.

Author_Institution

HRL Labs., LLC, Malibu, CA

Volume

18

Issue

10

fYear

2008

Firstpage

686

Lastpage

688

Abstract

A W-band monolithic microwave integrated circuit (MMIC), including an Sb-heterostructure diode on a GaAs substrate, has been demonstrated. The MMIC also includes the RF choke and output shorting capacitor essential to detector circuits. Additional input matching has yielded peak sensitivities on the order of 10 000 V/W and equivalent bandwidths of 40 GHz. Using these circuits in conjunction with current W-band low-noise amplifier technology can achieve the sub-1degK noise equivalent temperature difference necessary for producing discernible images with W-band passive imaging cameras.

Keywords

III-V semiconductors; MMIC; antimony; gallium arsenide; millimetre wave imaging; GaAs; MMIC; Sb; W band; equivalent bandwidths; frequency 40 GHz; heterostructure diode; input matching; noise equivalent temperature difference; passive millimeter wave imaging; peak sensitivities; Detectors; Diodes; Gallium arsenide; MIMICs; MMICs; Microwave imaging; Microwave integrated circuits; Millimeter wave technology; Monolithic integrated circuits; Radio frequency; Gallium-arsenide (GaAs) monolithic microwave integrated circuits (MMICs); MMICs; millimeter wave detectors; millimeter wave imaging; tunnel diodes;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2003471

Filename

4639555