DocumentCode
884794
Title
The Resistive Gate CTD Area-Image Sensor
Author
Heyns, Hendrik ; van Santen, J.G.
Volume
13
Issue
1
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
61
Lastpage
65
Abstract
The transport of charge in a resistive gate controlled PCCD channel structure is described. With the aid of time analysis it is shown that this structure can be used for column transport in a practical area-image sensor. The operating principles of this type of CTD sensor are discussed, with emphasis on blue sensitivity and antiblooming operation. A 96-element linear test circuit has been built for evaluating the expected sensor performance. Design data and some relevant measured results are presented. Results for charge transport time, modulation transfer function, and spectral responsivity illustrate the feasibility of this new solid-state sensor approach.
Keywords
Charge-coupled device circuits; Image sensors; Circuit testing; Dielectric substrates; Electrodes; Electrons; Image sensors; Image storage; Integrated circuit measurements; Sensor phenomena and characterization; Solid state circuits; Transfer functions;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1050996
Filename
1050996
Link To Document