Title :
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Author :
Jang, Moongyu ; Lee, Seongjae ; Park, Kyoungwan
Author_Institution :
Semicond. & Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejon, South Korea
Abstract :
The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence with the experimental results in 10-μm-long channel n-type SBTTs. From these results, the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60-nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 105 at low-drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current.
Keywords :
Schottky barriers; Schottky gate field effect transistors; erbium compounds; tunnel transistors; 0.24 eV; 10 micron; 60 nm; Er-silicided n-type Schottky barrier tunnel transistors; ErSix; drain current to drain voltage characteristics; nanometer regime applications; thermionic current; tunneling current; Current-voltage characteristics; Electrons; Erbium; MOSFETs; Manufacturing; Schottky barriers; Silicides; Silicon; Threshold voltage; Tunneling;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2003.820801