Enhancement of adjustable threshold voltage range by substrate bias due to quantum confinement in ultrathin body SOI pMOSFETs

Author

Tsutsui, Gen ; Nagumo, Tashiharu ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Japan

Volume

2

Issue

4

fYear

2003

Firstpage

314

Lastpage

318

Abstract

The body effect in ultrathin body (silicon-on-insulator) SOI MOSFETs has been investigated by experiments and modeling. It is demonstrated for the first time that the adjustable threshold voltage range by substrate bias is enhanced due to the quantum confinement effect in ultrathin body SOI. The enhancement ratio of the adjustable threshold voltage range in a 4.3-nm-thick SOI MOSFET compared to 11.7-nm-thick one is around 10%. This indicates that ultrathin body MOSFETs are useful not only for suppressing the short channel effects, but also for suppressing the off-leak current in the variable threshold CMOS scheme.

Keywords

CMOS integrated circuits; MOSFET; leakage currents; silicon-on-insulator; size effect; 11.7 nm; 4.3 nm; adjustable threshold voltage range; enhancement ratio; off-leak current; quantum confinement; short channel effects; substrate bias; ultrathin body SOI pMOSFETs; variable threshold CMOS scheme; Degradation; Fabrication; FinFETs; Helium; Immune system; MOSFETs; Potential well; Silicon on insulator technology; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2003.820985

Filename

1264887