Title :
50-nm fully depleted SOI CMOS technology with HfO2 gate dielectric and TiN gate
Author :
Vandooren, Anne ; Egley, S. ; Zavala, M. ; Stephens, T. ; Mathew, Leo ; Rossow, M. ; Thean, A. ; Barr, Alex ; Shi, Z. ; White, Ted ; Pham, Daniel ; Conner, J. ; Prabhu, L. ; Triyoso, D. ; Schaeffer, J. ; Roan, D. ; Nguyen, Bich-yen ; Orlowski, M. ; Mogab,
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices using HfO2 gate dielectric at the 50-nm physical gate length. Symmetric VT is achieved for long-channel nMOS and pMOS devices using midgap TiN single metal gate with undoped channel and high-k dielectric. The devices show excellent performance with a Ion=500 μA/μm and Ioff=10 nA/μm at VDD=1.2 V for nMOSFET and Ion=212 μA/μm and Ioff=44 pA/μm at VDD=-1.2 V for pMOSFET, with a CET=30 Å and a gate length of 50 nm. DIBL and SS values as low as 70 mV/V nand 77 mV/dec, respectively, are obtained with a silicon film thickness of 14 nm. Ring oscillators with 15 ps stage delay at VDD=1.2 V are also realized.
Keywords :
CMOS integrated circuits; electron mobility; hafnium compounds; hole mobility; nanotechnology; silicon-on-insulator; titanium compounds; 1.2 V; 14 nm; 15 ps; 30 Å; 50 nm; 50-nm fully depleted SOI CMOS technology; HfO2; HfO2 gate dielectric; Si; TiN; TiN gate; ring oscillators; CMOS technology; Dielectric devices; Dielectric thin films; Hafnium oxide; High-K gate dielectrics; MOS devices; MOSFET circuits; Silicon; Thin film devices; Tin;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2003.820502
