Title :
Continuous active T-gate travelling-wave transistor
Author :
Sebati, N. ; Gamand, P. ; Varin, Charles
Author_Institution :
Labs. d´Electron. et de Phys. Appliquee, Limeil-Brevannes, France
fDate :
3/6/1989 12:00:00 AM
Abstract :
In the letter experimental results are presented which show that a continuous active gate travelling-wave transistor (TWT) can be used for medium power applications in a wide bandwidth. To reduce the gate resistance, a T-gate configuration has been chosen. This allows one to extend the frequency bandwidth of such a device. Simulations have been performed using small- and large-signal models taking in addition the parasitic capacitances into account. A distributed Schottky diode has been used to adjust the phase synchronisation and therefore to achieve flat gain.
Keywords :
field effect transistors; power transistors; solid-state microwave devices; T-gate travelling-wave transistor; bandwidth; continuous active gate; distributed Schottky diode; flat gain; large-signal models; medium power applications; parasitic capacitances; phase synchronisation; small-signal models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890277