• DocumentCode
    885221
  • Title

    Continuous active T-gate travelling-wave transistor

  • Author

    Sebati, N. ; Gamand, P. ; Varin, Charles

  • Author_Institution
    Labs. d´Electron. et de Phys. Appliquee, Limeil-Brevannes, France
  • Volume
    25
  • Issue
    6
  • fYear
    1989
  • fDate
    3/6/1989 12:00:00 AM
  • Firstpage
    403
  • Lastpage
    404
  • Abstract
    In the letter experimental results are presented which show that a continuous active gate travelling-wave transistor (TWT) can be used for medium power applications in a wide bandwidth. To reduce the gate resistance, a T-gate configuration has been chosen. This allows one to extend the frequency bandwidth of such a device. Simulations have been performed using small- and large-signal models taking in addition the parasitic capacitances into account. A distributed Schottky diode has been used to adjust the phase synchronisation and therefore to achieve flat gain.
  • Keywords
    field effect transistors; power transistors; solid-state microwave devices; T-gate travelling-wave transistor; bandwidth; continuous active gate; distributed Schottky diode; flat gain; large-signal models; medium power applications; parasitic capacitances; phase synchronisation; small-signal models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890277
  • Filename
    21049