Title :
Characterization of an MOS sense amplifier
Author :
Varshney, Ramesh C. ; Venkateswaran, K.
fDate :
4/1/1978 12:00:00 AM
Abstract :
A novel technique to characterize MOS sense amplifiers is described. The technique does not perturb the operation of the sense amplifier during characterization. An MOS sense amplifier has been characterized using this technique for various power supply and clock conditions. The characterization results are given to demonstrate the sensitivity of the technique.
Keywords :
Amplifiers; Field effect integrated circuits; Integrated memory circuits; amplifiers; field effect integrated circuits; integrated memory circuits; Capacitance measurement; Circuits; Fabrication; Gallium arsenide; Intrusion detection; Parasitic capacitance; Performance evaluation; Power amplifiers; Power generation; Roentgenium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051032
