Performance Limits Projection of Black Phosphorous Field-Effect Transistors

Author

Kai-Tak Lam ; Zhipeng Dong ; Jing Guo

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

35

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

963

Lastpage

965

Abstract

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FETs) is investigated in this letter. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the armchair direction, which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20-nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of four orders. Monolayer BP FETs outperform both MoS₂ and Si FETs for both nand p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.

Keywords

delays; elemental semiconductors; field effect transistors; molybdenum compounds; phosphorus; semiconductor device models; silicon; MoS₂; Si; anisotropic band structure; anisotropic effect mass; ballistic device performance; intrinsic delay; monolayer black phosphorous field effect transistors; size 20 nm; Anisotropic magnetoresistance; Effective mass; Field effect transistors; Performance evaluation; Silicon; MOS devices; semiconductor device modeling; thin film transistors; thin film transistors.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2333368

Filename

6851855