DocumentCode :
885371
Title :
Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structures
Author :
Fitzgerald, D.J.
Volume :
54
Issue :
11
fYear :
1966
Firstpage :
1601
Lastpage :
1602
Keywords :
Capacitance measurement; Current measurement; DC generators; Diodes; Distortion measurement; Force measurement; Silicon; Spontaneous emission; Velocity measurement; Voltage measurement;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5217
Filename :
1447147
Link To Document :
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