DocumentCode
885389
Title
New GaAs quantum wires on
Author
Fukui, T. ; Ando, Shin
Author_Institution
NTT Basic Res. Labs., Tokyo, Japan
Volume
25
Issue
6
fYear
1989
fDate
3/6/1989 12:00:00 AM
Firstpage
410
Lastpage
412
Abstract
New GaAs quantum wires are fabricated on
Keywords
CVD coatings; III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor quantum wells; 10 nm; 2DEG; GaAs; Shubnikov-de Haas oscillations; channel widths; crystallographic facets; growth conditions; metalorganic chemical vapour deposition; quantum wires; selective area growth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890282
Filename
21054
Link To Document